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| PD - 93800A PROVISIONAL SMPS MOSFET Applications Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l IRFBA35N60C HEXFET(R) Power MOSFET VDSS 600V RDS(on) max 0.080 ID 35A Benefits Low Gate Charge Qg Reduces Drive Required l Improved Gate Resistance for Faster Switching l Fully Characterized Capacitance and Avalanche Voltage and Current l Lowest Conduction Loss in Package Outline l Effective COSS specified (See AN 1001) l Super-220TM Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Recommended clip force Max. 35 22 140 250 2.0 20 TBD -40 to + 150 -55 to + 150 300 (1.6mm from case ) 20 Units A W W/C V V/ns N Applicable Off Line SMPS Topologies: l l Power Factor Correction Boost Full Bridge www.irf.com 1 10/25/99 IRFBA35N60C Static @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 600 --- --- 4.0 --- --- --- --- Typ. --- 0.54 --- --- --- --- --- --- Max. Units Conditions --- V V GS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.080 VGS = 10V, ID = 21A 6.0 V VDS = VGS, ID = 250A 100 VDS = 600V, VGS = 0V A 500 VDS = 480V, VGS = 0V, TJ = 125C 100 VGS = 20V nA -100 VGS = -20V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 16 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- --- --- 28 89 62 33 6170 3030 160 14310 132 216 Max. Units Conditions --- S VDS = 50V, ID = 21A 280 ID = 21A 59 nC VDS = 360V 140 VGS = 10V --- VDD = 300V --- ID = 21A ns --- RG = 1.3 --- R D = 14 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 480V, = 1.0MHz --- VGS = 0V, VDS = 0V to 480V Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. --- --- --- Max. TBD 21 25 Units mJ A mJ Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. --- 0.5 --- Max. 0.50 --- 58 Units C/W Diode Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 35 --- --- showing the A G integral reverse --- --- 140 S p-n junction diode. --- --- 1.5 V TJ = 25C, IS = 21A, VGS = 0V --- 550 820 ns TJ = 25C, IF = 21A --- 12 18 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRFBA35N60C Super-220TM Package Outline Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 300s; duty cycle 2%. Starting TJ = 25C, L = TBDmH RG = 25, IAS = 35A, dv/dt = TBD V/ns. ISD TBDA, di/dt TBDA/s, VDD V(BR)DSS, TJ 150C WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 Data and specifications subject to change without notice. 10/99 www.irf.com 3 |
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